Uniaxially strained nanowire structure

ABSTRACT

Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/948,039, filed on Nov. 20, 2015, which is a continuation of U.S.patent application Ser. No. 13/995,913, filed on Jun. 19, 2013, now U.S.Pat. No. 9,224,808, issued on Dec. 29, 2015, which is a U.S. NationalPhase application under 35 U.S.C. §371 of International Application No.PCT/US2011/067236, filed on Dec. 23, 2011, the entire contents of whichare hereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the invention are in the field of nanowire semiconductordevices and, in particular, uniaxially strained nanowire structures.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory devices on a chip,lending to the fabrication of products with increased capacity. Thedrive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

Maintaining mobility improvement and short channel control asmicroelectronic device dimensions scale past the 15 nanometer (nm) nodeprovides a challenge in device fabrication. Nanowires used to fabricatedevices provide improved short channel control. For example, silicongermanium (Si_(x)Ge_(1-x)) nanowire channel structures (where x<0.5)provide mobility enhancement at respectable Eg, which is suitable foruse in many conventional products which utilize higher voltageoperation. Furthermore, silicon germanium (Si_(x)Ge_(1-x)) nanowirechannels (where x>0.5) provide mobility enhanced at lower Egs (suitablefor low voltage products in the mobile/handheld domain, for example.

Many different techniques have been attempted to improve the mobility oftransistors. However, significant improvements are still needed in thearea of electron and/or hole mobility improvement for semiconductordevices.

SUMMARY

Embodiments of the present invention include uniaxially strainednanowire structures.

In an embodiment, a semiconductor device includes a plurality ofvertically stacked uniaxially strained nanowires disposed above asubstrate. Each of the uniaxially strained nanowires includes a discretechannel region disposed in the uniaxially strained nanowire. Thediscrete channel region has a current flow direction along the directionof the uniaxial strain. Source and drain regions are disposed in thenanowire, on either side of the discrete channel region. A gateelectrode stack completely surrounds the discrete channel regions.

In another embodiment, a semiconductor structure includes a firstsemiconductor device including a first nanowire disposed above asubstrate. The first nanowire has uniaxial tensile strain and includes adiscrete channel region and source and drain regions on either side ofthe discrete channel region. The discrete channel region has a currentflow direction along the direction of the uniaxial tensile strain. Thefirst semiconductor device also includes a first gate electrode stackcompletely surrounding the discrete channel region of the firstnanowire. The semiconductor structure also includes a secondsemiconductor device including a second nanowire disposed above thesubstrate. The second nanowire has uniaxial compressive strain andincludes a discrete channel region and source and drain regions oneither side of the discrete channel region. The discrete channel regionhas a current flow direction along the direction of the uniaxialcompressive strain. The second semiconductor device also includes asecond gate electrode stack completely surrounding the discrete channelregion of the second nanowire.

In another embodiment, a method of fabricating a nanowire semiconductorstructure includes forming a first active layer above a substrate, thefirst active layer having a first lattice constant. A second activelayer is formed on the first active layer, the second active layerhaving a second lattice constant greater than the first latticeconstant. A first nanowire having uniaxial tensile strain is formed fromthe first active layer. The first nanowire includes a discrete channelregion and source and drain regions on either side of the discretechannel region. The discrete channel region has a current flow directionalong the direction of the uniaxial tensile strain. A second nanowirehaving uniaxial compressive strain is formed from the second activelayer. The second nanowire includes a discrete channel region and sourceand drain regions on either side of the discrete channel region. Thediscrete channel region has a current flow direction along the directionof the uniaxial compressive strain. A first gate electrode stack isformed to completely surround the discrete channel region of the firstnanowire. A second gate electrode stack is formed to completely surroundthe discrete channel region of the second nanowire.

In another embodiment, a PMOS semiconductor device includes a nanowiredisposed above a substrate and having uniaxial compressive strain. Thenanowire includes a discrete channel region having a current flowdirection along the direction of the uniaxial compressive strain. Thenaowire also includes P-type source and drain regions disposed on eitherside of the discrete channel region. A P-type gate electrode stackcompletely surrounds the discrete channel region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a three-dimensional cross-sectional view of ananowire-based semiconductor structure, in accordance with an embodimentof the present invention.

FIG. 1B illustrates a cross-sectional channel view of the nanowire-basedsemiconductor structure of FIG. 1A, as taken along the a-a′ axis, inaccordance with an embodiment of the present invention.

FIG. 1C illustrates a cross-sectional spacer view of the nanowire-basedsemiconductor structure of FIG. 1A, as taken along the b-b′ axis, inaccordance with an embodiment of the present invention.

FIG. 2 illustrates an angled view of a nanowire having compressiveuniaxial strain, in accordance with an embodiment of the presentinvention.

FIG. 3 illustrates an angled view of a nanowire having tensile uniaxialstrain, in accordance with an embodiment of the present invention.

FIGS. 4A-4F illustrate three-dimensional cross-sectional viewsrepresenting various operations in a method of fabricating a nanowiresemiconductor structure, in accordance with an embodiment of the presentinvention.

FIG. 5 illustrates a three-dimensional cross-sectional view of anothernanowire-based semiconductor structure, in accordance with an embodimentof the present invention.

FIG. 6 illustrates a computing device in accordance with oneimplementation of the invention.

DETAILED DESCRIPTION

Uniaxially strained nanowire structures are described. In the followingdescription, numerous specific details are set forth, such as specificnanowire integration and material regimes, in order to provide athorough understanding of embodiments of the present invention. It willbe apparent to one skilled in the art that embodiments of the presentinvention may be practiced without these specific details. In otherinstances, well-known features, such as integrated circuit designlayouts, are not described in detail in order to not unnecessarilyobscure embodiments of the present invention. Furthermore, it is to beunderstood that the various embodiments shown in the Figures areillustrative representations and are not necessarily drawn to scale.

One or more embodiments of the present invention are directed atimproving the channel mobility for NMOS or PMOS transistors, or both.Mobility may be improved using strain, e.g., in the channel region.Thus, one or more approaches described herein provide the appropriatestrain in the channel regions for both NMOS and PMOS transistors. In anembodiment, strained NMOS and PMOS nanowires are provided.

A strained silicon-on-insulator stack may be used as a starting pointfor fabricating nanowire-based devices having strained channel regions.For example, in one embodiment, a strained silicon layer of such asubstrate is used as a first active layer. A second active layer is thenformed on the first active layer using silicon germanium (SiGe) with ahigher Ge % than used to fabricate the initial strainedsilicon-on-insulator substrate. Upon patterning the stack including thefirst and second active layers, the remaining portion of the SiGe layerhas compressive uniaxial stress along the current flow direction of thefin, while the remaining portion of the silicon layer has tensileuniaxial stress along the current flow direction of the fin. At areplacement metal gate operation, either silicon (for PMOS devices) orSiGe (for NMOS devices) is removed from the fin stack to fabricatenanowires with a gate-all-around structure. The above approach, alongwith other approaches to forming strained nanowire-based devices, isdescribed in greater detail below in association with the Figures.

For example, FIG. 1A illustrates a three-dimensional cross-sectionalview of a nanowire-based semiconductor structure, in accordance with anembodiment of the present invention. FIG. 1B illustrates across-sectional channel view of the nanowire-based semiconductorstructure of FIG. 1A, as taken along the a-a′ axis. FIG. 1C illustratesa cross-sectional spacer view of the nanowire-based semiconductorstructure of FIG. 1A, as taken along the b-b′ axis.

Referring to FIG. 1A, a semiconductor device 100 includes one or morevertically stacked nanowires (104 set) disposed above a substrate 102.Embodiments herein are targeted at both single wire devices and multiplewire devices. As an example, a three nanowire-based device havingnanowires 104A, 104B and 104C is shown for illustrative purposes. Forconvenience of description, nanowire 104A is used as an example wheredescription is focused on only one of the nanowires. It is to beunderstood that where attributes of one nanowire are described,embodiments based on a plurality of nanowires may have the sameattributes for each of the nanowires.

Each of the nanowires 104 includes a channel region 106 disposed in thenanowire. The channel region 106 has a length (L). Referring to FIG. 1B,the channel region also has a perimeter orthogonal to the length (L).Referring to both FIGS. 1A and 1B, a gate electrode stack 108 surroundsthe entire perimeter of each of the channel regions 106. The gateelectrode stack 108 includes a gate electrode along with a gatedielectric layer disposed between the channel region 106 and the gateelectrode (not shown). The channel region 106 is discrete in that it iscompletely surrounded by the gate electrode stack 108 without anyintervening material such as underlying substrate material or overlyingchannel fabrication materials. Accordingly, in embodiments having aplurality of nanowires 104, the channel regions 106 of the nanowires arealso discrete relative to one another, as depicted in FIG. 1B.

Referring again to FIG. 1A, each of the nanowires 104 also includessource and drain regions 110 and 112 disposed in the nanowire on eitherside of the channel region 104. A pair of contacts 114 is disposed overthe source/drain regions 110/112. In a specific embodiment, the pair ofcontacts 114 surrounds the entire perimeter of each of the source/drainregions 110/112, as depicted in FIG. 1A. That is, in an embodiment, thesource/drain regions 110/112 are discrete in that they are completelysurrounded by the contacts 114 without any intervening material such asunderlying substrate material or overlying channel fabricationmaterials. Accordingly, in such an embodiment having a plurality ofnanowires 104, the source/drain regions 110/112 of the nanowires arealso discrete relative to one another.

Referring again to FIG. 1A, in an embodiment, the semiconductor device100 further includes a pair of spacers 116. The spacers 116 are disposedbetween the gate electrode stack 108 and the pair of contacts 114. Asdescribed above, the channel regions and the source/drain regions are,in at least several embodiments, made to be discrete. However, not allregions of the nanowires 104 need be, or even can be made to bediscrete. For example, referring to FIG. 1C, nanowires 104A-104C are notdiscrete at the location under spacers 116. In one embodiment, the stackof nanowires 104A-104C have intervening semiconductor material 118 therebetween, such as silicon germanium intervening between siliconnanowires, or vice versa, as described below in association with FIGS.4A-4F. In one embodiment, the bottom nanowire 104A is still in contactwith a portion of substrate 102, e.g., in contact with an insulatinglayer portion disposed on a bulk substrate. Thus, in an embodiment, aportion of the plurality of vertically stacked nanowires under one orboth of the spacers is non-discrete.

In accordance with an embodiment of the present invention, the one ormore nanowires 104 of the semiconductor device 100 are uniaxiallystrained nanowires. Thus, a semiconductor device may be fabricated froma single uniaxially strained nanowire (e.g., 104A) or from a pluralityof vertically stacked uniaxially strained nanowires (104A-104C), asdepicted in FIG. 1A. The uniaxially strained nanowire or plurality ofnanowires may be uniaxially strained with tensile strain or withcompressive strain. For example, FIG. 2 illustrates an angled view of ananowire having compressive uniaxial strain, while FIG. 3 illustrates anangled view of a nanowire having tensile uniaxial strain, in accordancewith one or more embodiments of the present invention.

Referring to FIG. 2, a nanowire 104-1 has a discrete channel region (C)disposed therein. A source region (S) and a drain region (D) aredisposed in the nanowire 104-1, on either side of the channel region(C). The discrete channel region of the nanowire 104-1 has a currentflow direction along the direction of a uniaxial compressive strain(arrows pointed toward one another), from the source region (S) to thedrain region (D). In an embodiment, the uniaxially strained nanowire104-1 having uniaxial compressive strain is composed of silicongermanium (Si_(x)Ge_(y), where 0<x<100, and 0<y<100). In a specific suchembodiment, x is approximately 30 and y is approximately 70. In anembodiment, a PMOS semiconductor device is fabricated from the nanowire104-1 having the uniaxial compressive strain.

Referring to FIG. 3, a nanowire 104-2 has a discrete channel region (C)disposed therein. A source region (S) and a drain region (D) aredisposed in the nanowire 104-2, on either side of the channel region(C). The discrete channel region of the nanowire 104-2 has a currentflow direction along the direction of a uniaxial tensile strain (arrowspointed away from one another), from the source region (S) to the drainregion (D). In an embodiment, the uniaxially strained nanowire 104-2having uniaxial tensile strain is composed of silicon. In an embodiment,an NMOS semiconductor device is fabricated from the nanowire 104-2having the uniaxial tensile strain.

Referring again to FIG. 1A, the substrate 102 may be composed of amaterial suitable for semiconductor device fabrication. In oneembodiment, substrate 102 includes a lower bulk substrate composed of asingle crystal of a material which may include, but is not limited to,silicon, germanium, silicon-germanium or a III-V compound semiconductormaterial. An upper insulator layer composed of a material which mayinclude, but is not limited to, silicon dioxide, silicon nitride orsilicon oxy-nitride is disposed on the lower bulk substrate. Thus, thestructure 100 may be fabricated from a startingsemiconductor-on-insulator substrate, such as a silicon-on-insulator(SOI) substrate or strained silicon-on-insulator (sSOI) substrate. Assuch, in one embodiment, the plurality of vertically stacked uniaxiallystrained nanowires 104 is disposed above a bulk crystalline substratehaving an intervening dielectric layer disposed thereon, as depicted inFIGS. 1A-1C. Alternatively, the structure 100 is formed directly from abulk substrate and local oxidation is used to form electricallyinsulative portions in place of the above described upper insulatorlayer. As such, in another embodiment, the plurality of verticallystacked uniaxially strained nanowires 104 is disposed above a bulkcrystalline substrate having no intervening dielectric layer disposedthereon.

In an embodiment, the uniaxially strained nanowires 104 may be sized aswires or ribbons (the latter described below), and may have squared-offor rounded corners. In an embodiment, the uniaxially strained nanowires104 are composed of a material such as, but not limited to, silicon,germanium, or a combination thereof. In one such embodiment, theuniaxially strained nanowires are single-crystalline. For example, for auniaxially strained silicon nanowire 104, a single-crystalline nanowiremay be based from a (100) global orientation, e.g., with a <100> planein the z-direction. In an embodiment, the dimensions of the uniaxiallystrained nanowires 104, from a cross-sectional perspective as shown inFIG. 1B, are on the nano-scale. For example, in a specific embodiment,the smallest dimension of the uniaxially strained nanowires 104 is lessthan approximately 20 nanometers.

The width and height of each of the channel regions 106 is shown asapproximately the same in FIG. 1B, however, they need not be. Forexample, in another embodiment (not shown), the width of the uniaxiallystrained nanowires 104 is substantially greater than the height. In aspecific embodiment, the width is approximately 2-10 times greater thanthe height. Nanowires with such geometry may be referred to asnanoribbons. In an alternative embodiment (also not shown), thenanoribbons are oriented vertically. That is, each of the uniaxiallystrained nanowires 104 has a width and a height, the width substantiallyless than the height.

In an embodiment, referring again to FIG. 1A, the gate electrode of gateelectrode stack 108 is composed of a metal gate and the gate dielectriclayer is composed of a high-K material. For example, in one embodiment,the gate dielectric layer is composed of a material such as, but notlimited to, hafnium oxide, hafnium oxy-nitride, hafnium silicate,lanthanum oxide, zirconium oxide, zirconium silicate, tantalum oxide,barium strontium titanate, barium titanate, strontium titanate, yttriumoxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate,or a combination thereof. Furthermore, a portion of gate dielectriclayer may include a layer of native oxide formed from the top few layersof the nanowire 104. In an embodiment, the gate dielectric layer iscomposed of a top high-k portion and a lower portion composed of anoxide of a semiconductor material. In one embodiment, the gatedielectric layer is composed of a top portion of hafnium oxide and abottom portion of silicon dioxide or silicon oxy-nitride.

In one embodiment, the gate electrode is composed of a metal layer suchas, but not limited to, metal nitrides, metal carbides, metal silicides,metal aluminides, hafnium, zirconium, titanium, tantalum, aluminum,ruthenium, palladium, platinum, cobalt, nickel or conductive metaloxides. In a specific embodiment, the gate electrode is composed of anon-workfunction-setting fill material formed above a metalworkfunction-setting layer.

In an embodiment, the spacers 116 are composed of an insulativedielectric material such as, but not limited to, silicon dioxide,silicon oxy-nitride or silicon nitride. The contacts 114 are, in anembodiment, fabricated from a metal species. The metal species may be apure metal, such as nickel or cobalt, or may be an alloy such as ametal-metal alloy or a metal-semiconductor alloy (e.g., such as asilicide material).

Although the device 100 described above is for a single device, e.g., anNMOS or a PMOS device, a CMOS architecture may also be formed to includeboth NMOS and PMOS nanowire-based strained channel devices disposed onor above the same substrate. For example, in accordance with anotherembodiment of the present invention, a semiconductor structure includesa first semiconductor device. The first semiconductor device includes afirst nanowire disposed above a substrate. The first nanowire hasuniaxial tensile strain and includes a discrete channel region andsource and drain regions on either side of the discrete channel region.The discrete channel region has a current flow direction along thedirection of the uniaxial tensile strain. A first gate electrode stackcompletely surrounds the discrete channel region of the first nanowire.

The CMOS semiconductor structure also includes a second semiconductordevice including a second nanowire disposed above the substrate. Thesecond nanowire has uniaxial compressive strain and includes a discretechannel region and source and drain regions on either side of thediscrete channel region. The discrete channel region has a current flowdirection along the direction of the uniaxial compressive strain. Asecond gate electrode stack completely surrounds the discrete channelregion of the second nanowire.

In an embodiment, the first nanowire is composed of silicon, and thesecond nanowire is composed of silicon germanium (Si_(x)Ge_(y), where0<x<100, and 0<y<100). In one such embodiment, the first semiconductordevice is an NMOS device, and the second semiconductor device is a PMOSdevice. In one embodiment, x is approximately 30 and y is approximately70. However, other stoichiometries may be selected as well, so long asthey maintain strain within the layer, e.g., Si₄₀Ge₆₀ may be usedinstead. In an embodiment, the CMOS semiconductor structure may befabricated from a starting semiconductor-on-insulator substrate. Assuch, in one embodiment, the first and second nanowires are disposedabove a bulk crystalline substrate having an intervening dielectriclayer disposed thereon.

In an embodiment, the source and drain regions of each of the first andsecond nanowires are discrete. Also, in one such embodiment, the firstsemiconductor device further includes a first pair of contactscompletely surrounding the discrete source and drain regions of thefirst nanowire, and the second semiconductor device further includes asecond pair of contacts completely surrounding the discrete source anddrain regions of the second nanowire. In an embodiment, the CMOSsemiconductor structure further includes a first pair of spacersdisposed between the first gate electrode stack and the first pair ofcontacts, and a second pair of spacers disposed between the second gateelectrode stack and the second pair of contacts.

In an embodiment, a portion of each of the first and second nanowires isnon-discrete. In an embodiment, the first semiconductor device furtherincludes one or more additional nanowires having uniaxial tensile strainand vertically stacked with the first nanowire. Meanwhile, the secondsemiconductor device further includes one or more additional nanowireshaving uniaxial compressive strain and vertically stacked with thesecond nanowire.

In another aspect, methods of fabricating a nanowire semiconductorstructure are provided. For example, FIGS. 4A-4F illustratethree-dimensional cross-sectional views representing various operationsin a method of fabricating a nanowire semiconductor structure, inaccordance with an embodiment of the present invention.

A method of fabricating a nanowire semiconductor structure may, in anembodiment, include forming both a PMOS nanowire-based semiconductordevice and an adjacent NMOS nanowire-based semiconductor device. Eachdevice may be fabricated by forming a nanowire above a substrate. In aspecific embodiment ultimately providing the formation of two uniaxiallystrained nanowires for each of the NMOS and PMOS nanowire-basedsemiconductor devices, FIG. 4A illustrates an initial structure 400having a substrate 402 (e.g., composed of a bulk substrate siliconsubstrate 402A with an insulating silicon dioxide layer 402B there on)and a silicon layer 404/silicon germanium layer 406/silicon layer408/silicon germanium layer 410 stack disposed thereon.

In accordance with an embodiment of the present invention, each of thesilicon layer 404, the silicon germanium layer 406, the silicon layer408, and the silicon germanium layer 410 are strained. In one suchembodiment, the silicon layers 404 and 408 have tensile strain, whilethe silicon geranium layers 406 and 410 have compressive strain.Referring again to FIG. 4A, in an exemplary embodiment, structure 400 isprovided by growing strained silicon germanium and silicon layers on awafer of an initial strained silicon layer formed on an insulator layeratop an underlying bulk substrate (the strained silicon portion of whichis layer 404). The initial structure is, in a specific embodiment, abiaxial tensile strained silicon layer on such a wafer. In a particularembodiment, the silicon layer 404 has strain equivalent to if the layerwas grown on relaxed Si₇₀Ge₃₀, e.g., involving a “virtual substrate.”Next, a Si₃₀Ge₇₀ layer (layer 406) is grown. The Si₃₀Ge₇₀ layer 406 iscompressively strained with equivalent biaxial strain to 40% silicongermanium due to the delta between the strained silicon layer 404 andthe Si₃₀Ge₇₀ lattice parameters. A second tensile strained silicon layer408 and a second compressive strained Si₃₀Ge₇₀ layer 410 are then grown.

Referring to FIG. 4B, a portion of the silicon layer 404/silicongermanium layer 406/silicon layer 408/silicon germanium layer 410 stackas well as a top portion of the silicon dioxide layer 402B is patternedinto a fin-type structure 412, e.g., with a mask and plasma etchprocess. Thus, in an embodiment, a free surface is formed on either sideof each of the silicon and silicon germanium layers by patterning toprovide the fin-type structure 412. In one such embodiment, theintroduction of the free surfaces in the width direction reduces to someextent the biaxial stresses in the silicon and silicon germanium layers.Then, upon forming discrete nanowires (as described below in associationwith FIG. 4E), the biaxial stresses remaining in the silicon and silicongermanium layers are transformed to be predominately, if not all,uniaxial, as described above in association with FIGS. 2 and 3.

In a specific example showing the formation of three gate structures,FIG. 4C illustrates the fin-type structure 412 with three sacrificialgates 414A, 414B, and 414C disposed thereon. In one such embodiment, thethree sacrificial gates 414A, 414B, and 414C are composed of asacrificial gate oxide layer 416 and a sacrificial polysilicon gatelayer 418 which are, e.g., blanket deposited and patterned with a plasmaetch process.

Following patterning to form the three sacrificial gates 414A, 414B, and414C, spacers may be formed on the sidewalls of the three sacrificialgates 414A, 414B, and 414C, doping may be performed in regions 420 ofthe fin-type structure 412 shown in FIG. 4C (e.g., tip and/or source anddrain type doping), and an interlayer dielectric layer may be formed tocover and then re-expose the three sacrificial gates 414A, 414B, and414C. The interlayer dielectric layer may then be polished to expose thethree sacrificial gates 414A, 414B, and 414C for a replacement gate, orgate-last, process. Referring to FIG. 4D, the three sacrificial gates414A, 414B, and 414C are exposed, along with spacers 422 and interlayerdielectric layer 424.

The sacrificial gates 414A, 414B, and 414C may then be removed, e.g., ina replacement gate or gate-last process flow, to expose channel portionsof the fin-type structure 412. Referring to the left-hand portion ofFIG. 4E, in the case that the fin-type structure 412 is used tofabricate an NMOS device, the sacrificial gates 414A, 414B, and 414C areremoved to provide trenches 426. Portions of the silicon germaniumlayers 406 and 410 exposed by the trenches 426, as well as exposedportions of the insulating silicon dioxide layer 402B, are removed toleave discrete portions of the silicon layers 404 and 408, e.g., toleave discrete silicon nanowires having uniaxial tensile strain.

Referring to the right-hand portion of FIG. 4E, in the case that thefin-type structure 412 is used to fabricate a PMOS device, thesacrificial gates 414A, 414B, and 414C are removed to provide trenches428. Portions of the silicon layers 404 and 408 exposed by the trenches428 are removed to leave discrete portions of the silicon germaniumlayers 406 and 410, e.g., to leave discrete silicon germanium nanowireshaving uniaxial compressive strain.

In an embodiment, the silicon layers 404 and 408 are etched selectivelywith a wet etch that selectively removes the silicon 404, 408 while notetching the silicon germanium nanowire structures 406 and 410. Such etchchemistries as aqueous hydroxide chemistries, including ammoniumhydroxide and potassium hydroxide, for example, may be utilized toselectively etch the silicon. In another embodiment, the silicongermanium layers 406 and 410 are etched selectively with a wet etch thatselectively removes the silicon germanium while not etching the siliconnanowire structures 404 and 408. Such etch chemistries as carboxylicacid/nitric acid/HF chemistry, and citric acid/nitric acid/HF, forexample, may be utilized to selectively etch the silicon germanium.Thus, either the silicon layers may be removed from the fin-typestructure 412 to form silicon germanium nanowires, or the silicongermanium layers may be removed from the fin-type structure 412 to formsilicon channel nanowires.

The discrete portions of the silicon layers 404 and 408 (NMOS) or thesilicon germanium layers (PMOS) shown in FIG. 4E will, in oneembodiment, ultimately become channel regions in a nanowire-basedstructure. Thus, at the process stage depicted in FIG. 4E, channelengineering or tuning may be performed. For example, in one embodiment,the discrete portions of the silicon layers 404 and 408 shown in theleft-hand portion of FIG. 4E, or the discrete portions of the silicongermanium layers 406 and 410 shown in the right-hand portion of FIG. 4E,are thinned using oxidation and etch processes. Such an etch process maybe performed at the same time the wires are separated by etching theopposing silicon or silicon germanium layers. Accordingly, the initialwires formed from silicon layers 404 and 408, or from silicon germaniumlayers 406 and 410, begin thicker and are thinned to a size suitable fora channel region in a nanowire device, independent from the sizing ofthe source and drain regions of the device.

Following formation of the discrete channel regions as depicted in FIG.4E, high-k gate dielectric and metal gate processing may be performedand source and drain contacts may be added. In the specific exampleshowing the formation of three gate structures over two siliconnanowires (NMOS) or over two silicon germanium nanowires (PMOS), FIG. 4Fillustrates the structure following deposition of an NMOS gate stack 430or a PMOS gate stack 432. The gate stacks may be composed of a high-kgate dielectric layer and an N-type or P-type metal gate electrodelayer, respectively. Additionally, FIG. 4F depicts the result of thesubsequent removal of the interlayer dielectric layer 424 afterformation of the permanent gate stack. Contacts may be formed in theplace of the interlayer dielectric layer 424 portions remaining in FIG.4E. In an embodiment, at some stage during the process of removing 424and forming contacts 434, source and drain engineering may also beperformed.

Thus, in perhaps more general terms, in an embodiment, a method offabricating a nanowire semiconductor structure includes forming a firstactive layer above a substrate. The first active layer has a firstlattice constant. A second active layer is then formed on the firstactive layer. The second active layer has a second lattice constantgreater than the first lattice constant. In one such embodiment, thefirst active layer is composed of silicon, and the second active layeris composed of silicon germanium (Si_(x)Ge_(y), where 0<x<100, and0<y<100). The number of active layers could stop here, e.g., for a CMOSstructure with a single wire PMOS device and a single wire NMOS device.Alternatively, as exemplified above, additional first and second activelayers may be repeated to ultimately provide multi-wire devices.

In an embodiment, the first active layer is formed above a bulkcrystalline substrate having an intervening dielectric layer disposedthereon. The first active layer is formed on the intervening dielectriclayer. In one such embodiment, the first active layer is composed ofsilicon and is formed by first forming a silicon layer on a substratehaving a top approximately Si₇₀Ge₃₀ layer. The silicon layer is thentransferred from the Si₇₀Ge₃₀ layer to the intervening dielectric layer.In a specific such embodiment, the second active layer is composed ofapproximately Si₃₀Ge₇₀.

The method then includes forming a first nanowire having uniaxialtensile strain from the first active layer. The first nanowire includesa discrete channel region and source and drain regions on either side ofthe discrete channel region. The discrete channel region has a currentflow direction along the direction of the uniaxial tensile strain. Asecond nanowire having uniaxial compressive strain is formed from thesecond active layer. The second nanowire includes a discrete channelregion and source and drain regions on either side of the discretechannel region. The discrete channel region has a current flow directionalong the direction of the uniaxial compressive strain. In anembodiment, forming the first nanowire from the first active layerincludes selectively removing a portion of the second active layer.Meanwhile, forming the second nanowire from the second active layerincludes selectively removing a portion of the first active layer.

The method then includes forming a first gate electrode stack tocompletely surround the discrete channel region of the first nanowire. Asecond gate electrode stack is formed to completely surround thediscrete channel region of the second nanowire. Subsequent processingoperations such as contact formation and back-end interconnect formationmay then be performed.

In an alternative embodiment, devices similar to the above describednanowire devices are fabricated on bulk wafers instead ofsilicon-on-insulator wafers. For example, FIG. 5 illustrates athree-dimensional cross-sectional view of another nanowire-basedsemiconductor structure, in accordance with an embodiment of the presentinvention.

Referring to FIG. 5 a relaxed silicon germanium buffer layer 502 is usedto provide a template for strained silicon layers 504 and 508 (NMOS) orstrained silicon germanium layers 506 and 510 (PMOS). The substrate 512on which the relaxed silicon germanium buffer layer 502 is isolated fromthe wires using either doping (e.g., such that the bottom wire is anomega-FET) or a post under fin oxidation process following finpatterning. Thus, in an embodiment, a second active layer (e.g., SiGe ofa first stoichiometry) is formed on a first active layer (e.g., silicon)which is formed on a bulk crystalline substrate having a top surfacelayer (e.g., a buffer layer) with a lattice constant between the firstand second lattice constants (e.g., a SiGe layer of a second, differentstoichiometry). No intervening global dielectric layer is disposedbetween the first active layer and the buffer layer of the bulksubstrate. In a specific embodiment, both tensile strained siliconnanowires and compressively strained silicon germanium nanowires arefabricated on relaxed silicon germanium substrates.

Accordingly, one or more embodiments of the present invention includecompressive strain for improved hole mobility for PMOS nanowire-baseddevices and tensile strain for improved electron mobility for NMOSnanowire-based devices. In one embodiment, one or more strained siliconlayers (e.g., lattice matched to relaxed Si₇₀Ge₃₀) and one or morestrained SiGe layers are fabricated above the same substrate. In anembodiment, strained silicon and strained silicon germanium devices areformed from such layers in order to improve or maximize deviceperformance. In an embodiment, NMOS and PMOS uniaxially strainednanowire or nanoribbon devices may be fabricated by one or moreapproaches described above. The PMOS transistors may include SiGe havinguniaxial compressive strain along the current flow direction, while theNMOS transistors may include silicon having uniaxial tensile strainalong the current flow direction.

FIG. 6 illustrates a computing device 600 in accordance with oneimplementation of the invention. The computing device 600 houses a board602. The board 602 may include a number of components, including but notlimited to a processor 604 and at least one communication chip 606. Theprocessor 604 is physically and electrically coupled to the board 602.In some implementations the at least one communication chip 606 is alsophysically and electrically coupled to the board 602. In furtherimplementations, the communication chip 606 is part of the processor604.

Depending on its applications, computing device 600 may include othercomponents that may or may not be physically and electrically coupled tothe board 602. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 606 enables wireless communications for thetransfer of data to and from the computing device 600. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 606 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 600 may include a plurality ofcommunication chips 606. For instance, a first communication chip 706may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 606 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 604 of the computing device 600 includes an integratedcircuit die packaged within the processor 604. In some implementationsof the invention, the integrated circuit die of the processor includesone or more devices, such as nanowire transistors built in accordancewith implementations of the invention. The term “processor” may refer toany device or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The communication chip 606 also includes an integrated circuit diepackaged within the communication chip 606. In accordance with anotherimplementation of the invention, the integrated circuit die of thecommunication chip includes one or more devices, such as nanowiretransistors built in accordance with implementations of the invention.

In further implementations, another component housed within thecomputing device 600 may contain an integrated circuit die that includesone or more devices, such as nanowire transistors built in accordancewith implementations of the invention.

In various implementations, the computing device 600 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 600 may be any other electronic device that processes data.

Thus, uniaxially strained nanowire structures have been disclosed. In anembodiment, a semiconductor device includes a plurality of verticallystacked uniaxially strained nanowires disposed above a substrate. Eachof the uniaxially strained nanowires includes a discrete channel regiondisposed in the uniaxially strained nanowire. The discrete channelregion has a current flow direction along the direction of the uniaxialstrain. Source and drain regions are disposed in the nanowire, on eitherside of the discrete channel region. A gate electrode stack completelysurrounds the discrete channel regions. In one embodiment, each of theuniaxially strained nanowires are composed of silicon and the uniaxiallystrain is a uniaxial tensile strain. In one embodiment, each of theuniaxially strained nanowires are composed of silicon germanium(Si_(x)Ge_(y), where 0<x<100, and 0<y<100) and the uniaxially strain isa uniaxial compressive strain.

What is claimed is:
 1. A semiconductor structure, comprising: a nanowireabove a substrate, the nanowire comprising: a discrete channel regionhaving a first side and a second side opposite the first side, thediscrete channel region having direction of uniaxial strain between thefirst side of the discrete channel region and the second side of thediscrete channel region; a discrete source region adjacent to the firstside of the discrete channel region; and a discrete drain regionadjacent to the second side of the discrete channel region; a gateelectrode completely surrounding the discrete channel region; aconductive source contact completely surrounding the discrete sourceregion; and a conductive drain contact completely surrounding thediscrete drain region.
 2. The semiconductor structure of claim 1,further comprising: a gate dielectric layer between the discrete channelregion and the gate electrode.
 3. The semiconductor structure of claim2, wherein the gate dielectric layer comprises a high-k dielectricmaterial, and wherein the gate electrode comprises a metal.
 4. Thesemiconductor structure of claim 1, wherein the nanowire consistsessentially of silicon and uniaxial strain of the discrete channelregion is a uniaxial tensile strain.
 5. The semiconductor structure ofclaim 1, wherein the nanowire consists essentially of silicon germanium(Si_(x) Ge_(y), where 0<x<100, and 0<y<100) and the uniaxial strain ofthe discrete channel region is a uniaxial compressive strain.
 6. Thesemiconductor structure of claim 5, wherein x is approximately 30 and yis approximately
 70. 7. The semiconductor structure of claim 1, whereinthe nanowire is above a bulk crystalline substrate having an interveningdielectric layer thereon.
 8. The semiconductor structure of claim 1,wherein the nanowire is above a bulk crystalline substrate having nointervening dielectric layer thereon.
 9. The semiconductor structure ofclaim 1, further comprising: a first dielectric spacer between theconductive source contact and the gate electrode; and a seconddielectric spacer between the conductive drain contact and the gateelectrode.
 10. The semiconductor device of claim 9, wherein a portion ofthe nanowire under the first and second spacers is non-discrete.
 11. Amethod of fabricating a semiconductor structure, the method comprising:forming a nanowire above a substrate, the nanowire comprising: adiscrete channel region having a first side and a second side oppositethe first side, the discrete channel region having a direction ofuniaxial strain between the first side of the discrete channel regionand the second side of the discrete channel region; a discrete sourceregion adjacent to the first side of the discrete channel region; and adiscrete drain region adjacent to the second side of the discretechannel region; forming a gate electrode completely surrounding thediscrete channel region; forming a conductive source contact completelysurrounding the discrete source region; and forming a conductive draincontact completely surrounding the discrete drain region.
 12. The methodof claim 11, further comprising: forming a gate dielectric layersurrounding the discrete channel region, wherein forming the gateelectrode comprises forming the gate electrode surrounding the gatedielectric layer.
 13. The method of claim 12, wherein forming the gatedielectric layer comprises forming a high-k dielectric layer, andwherein forming the gate electrode comprises forming a metal gateelectrode.
 14. The method of claim 11, wherein the nanowire consistsessentially of silicon and the uniaxial strain of the discrete channelregion is a uniaxial tensile strain.
 15. The method of claim 11, whereinthe nanowire consists essentially of silicon germanium (Si_(x)Ge_(y),where 0<x<100, and 0<y<100) and the uniaxial strain of the discretechannel region is a uniaxial compressive strain.
 16. The method of claim15, wherein x is approximately 30 and y is approximately
 70. 17. Themethod of claim 11, wherein the nanowire is formed above a bulkcrystalline substrate having an intervening dielectric layer thereon.18. The method of claim 11, wherein the nanowire is formed above a bulkcrystalline substrate having no intervening dielectric layer thereon.19. The method of claim 11, further comprising: forming a firstdielectric spacer at a first side of the gate electrode, wherein theconductive source contact is formed adjacent to the first dielectricspacer; and forming a second dielectric spacer at a second side of thegate electrode opposite the first side, wherein the conductive draincontact is formed adjacent to the second dielectric spacer.
 20. Themethod of claim 19, wherein a portion of the nanowire under the firstand second spacers is non-discrete.